Doping

In order to receive clear readings from the resistors heavily doped regions below the metal contacts were required. We have accomplished this in our process using a 1 hour diffusion at 975˚C.� Here is a picture of heavily doped contacts made in a run earlier this semester.

Following the contact regions another doping step is required.� This time the diffusion is not as intense in order for us to form the resistors seen the picture below.� Note how the resistors are aligned perfectly in the heavily doped region (red).

We have been able to perfect this doping technique over various wafers in separate runs.� Test from these resistors are getting kilo-ohm measurements.� These measurements were made using the probe station to ensure metal contacts were applied correctly.